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Gallium Nitride and Silicon Carbide Power Devices (Hardcover) (B. Jayant Baliga)

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Updating the material in his 2006 book on silicon carbide power semiconductor devices and adding recent developments in gallium nitride power devices, Baliga here emphasizes the physics of operation of the devices. His analyses provide guidelines for understanding the design and operation of various device structures generally, he says, but for designs for specific applications, he refers readers to papers published in the literature. Among his topics are material properties, ideal specific on-resistance, junction field effect transistors, silicon carbide planar power metal-oxide-semiconductor field-effect-transistors, silicon carbide bipolar junction transistors, and silicon carbide gate turn-off thyristors. Annotation ©2017 Ringgold, Inc., Portland, OR (protoview.com)
Number of Pages: 561
Genre: Technology
Format: Hardcover
Publisher: World Scientific Pub Co Inc
Author: B. Jayant Baliga
Language: English
Street Date: March 15, 2017
TCIN: 51738779
UPC: 9789813109407
Item Number (DPCI): 248-30-5956

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