This guide for students and practitioners reports on the latest results in gallium nitride (GaN), a semiconductor used in solar cells, RF semiconductor devices, bright-light-emitting diodes, and other high-frequency, high-power applications. International contributors in research and industry describe aspects of material physics, fabrication of devices and circuits, and applications. Some specific topics examined include InGaN-based solar cells, GaN transistors on large-diameter Si(111) substrate, GaN high-voltage power devices, and GaN-based interband tunnel junctions. B&w images, illustrations, and diagrams are included. Annotation ©2016 Ringgold, Inc., Portland, OR (protoview.com)
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low making it a suitable material for solar cell arrays for satellites. This book covers large aspects of GaN from the fundamental physics of this emerging material to the fabrication of devices and circuits that are already foreseen to replace standard Silicon or GaAs based in many applications.
Number of Pages: 372
Sub-Genre: Electronics / Circuits / General, Lasers, Electronics / Microelectronics
Series Title: Devices, Circuits, and Systems
Publisher: Taylor & Francis
Street Date: October 16, 2015
Item Number (DPCI): 247-50-8286