:

product description page

Gap Heteroepitaxy on Si100 : Benchmarking Surface Signals When Growing Gap on Si in Cvd Ambients

Gap Heteroepitaxy on Si100 : Benchmarking Surface Signals When Growing Gap on Si in Cvd Ambients - image 1 of 1

About this item

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
Edition: Reprint
Genre: Technology
Series Title: Springer Theses
Format: Paperback
Publisher: Springer Verlag
Author: Henning Du00f6scher
Language: English
Street Date: September 23, 2016
TCIN: 51716515
UPC: 9783319379555
Item Number (DPCI): 248-29-2450
If the item details above aren’t accurate or complete, we want to know about it. Report incorrect product info.

Guest reviews

Prices, promotions, styles and availability may vary by store & online. See our price match guarantee. See how a store is chosen for you.