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Ionizing Radiation Effects in Mos Devices and Circuits - Annotated by T P Ma & Paul V Dressendorfer (Hardcover)
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About this item
Highlights
- The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment.
- About the Author: T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.
- 608 Pages
- Technology, Electronics
Description
Book Synopsis
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.About the Author
T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.
Dimensions (Overall): 9.62 Inches (H) x 6.58 Inches (W) x 1.35 Inches (D)
Weight: 2.09 Pounds
Suggested Age: 22 Years and Up
Number of Pages: 608
Genre: Technology
Sub-Genre: Electronics
Publisher: Wiley-Interscience
Theme: Semiconductors
Format: Hardcover
Author: T P Ma & Paul V Dressendorfer
Language: English
Street Date: April 18, 1989
TCIN: 1007767121
UPC: 9780471848936
Item Number (DPCI): 247-02-1998
Origin: Made in the USA or Imported
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Shipping details
Estimated ship dimensions: 1.35 inches length x 6.58 inches width x 9.62 inches height
Estimated ship weight: 2.09 pounds
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