Terrestrial Radiation Effects in ULSI Devices and Electronic Systems - (IEEE Press) by Eishi H Ibe (Hardcover)

Book Synopsis

This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation.

• Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms
• Covers both terrestrial and avionic-level conditions
• Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary
• Written by a widely-recognized authority in soft-errors in electronic devices
• Code samples available for download from the Companion Website

This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.

From the Back Cover

Terrestrial Radiation Effects in ULSI Devices and Electronic Systems
EISHI H. IBE, Yokohama Research Laboratory, Hitachi Ltd, Japan

This book provides the reader with knowledge of a wide variety of radiation fields and their effects on electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyse radiation effects. A wide variety of prediction, detection, characterisation and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation.

• Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms
• Covers both terrestrial and avionic-level conditions
• Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary
• Written by a widely-recognised authority in soft-errors in electronic devices
• Code samples available for download from the Companion Website

This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book presents helpful methods.

About the Author

Eishi, H. Ibe, Chief Researcher, Yokohama Research Laboratory, Hitachi, Ltd.
Dr.Eishi Hidefumi IBE received his Ph.D degree in Nuclear Engineering from Osaka University, Japan in 1985. His expertise covers a wide area of science, such as elementary particle/cosmic ray physics, nuclear /neutron physics, semiconductor physics, mathematics and computing technologies, ion-implantation/mixing and accelerator technologies, electro-chemistry, data-base handling, and BS/Auger/SEM/
Laser-beam micro analysis. He has authored more than 90 international technical papers and presentations including 22 invited contributions in the field of radiation effects.
Dr.Ibe was elevated to IEEE Fellow for contributions to analysis of soft-errors in memory devices in 2008.