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Semiconductor Material and Device Characterization - (IEEE Press) 3rd Edition by Dieter K Schroder (Hardcover)

Semiconductor Material and Device Characterization - (IEEE Press) 3rd Edition by  Dieter K Schroder (Hardcover) - 1 of 1
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About this item

Highlights

  • This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers.
  • About the Author: DIETER K. SCHRODER, PhD, is Professor, Department of Electrical Engineering, Arizona State University.
  • 800 Pages
  • Technology, Electrical
  • Series Name: IEEE Press

Description



Book Synopsis



This Third Edition updates a landmark text with the latest findings

The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:

  • Updated and revised figures and examples reflecting the most current data and information
  • 260 new references offering access to the latest research and discussions in specialized topics
  • New problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added:

  • Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.
  • Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.



From the Back Cover



This Third Edition updates a landmark text with the latest findings

The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.

Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:

  • Updated and revised figures and examples reflecting the most current data and information
  • 260 new references offering access to the latest research and discussions in specialized topics
  • New problems and review questions at the end of each chapter to test readers' understanding of the material

In addition, readers will find fully updated and revised sections in each chapter.

Plus, two new chapters have been added:

  • Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.
  • Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.

Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.



Review Quotes




"The book is well-illustrated and provides an ample bibliography." (Optics & Photonics News, 4 November 2015)

"I strongly recommend this book for those who want to learn device characterization." (IEEE Circuits & Devices Magazine, November/December 2006)



About the Author



DIETER K. SCHRODER, PhD, is Professor, Department of Electrical Engineering, Arizona State University. He is a recipient of the ASU College of Engineering Teaching Excellence Award and several other teaching awards. In addition to Semiconductor Material and Device Characterization, Dr. Schroder is the author of Advanced MOS Devices.
Dimensions (Overall): 8.78 Inches (H) x 5.68 Inches (W) x 1.6 Inches (D)
Weight: 2.66 Pounds
Suggested Age: 22 Years and Up
Number of Pages: 800
Genre: Technology
Sub-Genre: Electrical
Series Title: IEEE Press
Publisher: Wiley-IEEE Press
Format: Hardcover
Author: Dieter K Schroder
Language: English
Street Date: December 1, 2005
TCIN: 1006242438
UPC: 9780471739067
Item Number (DPCI): 247-13-2204
Origin: Made in the USA or Imported

Shipping details

Estimated ship dimensions: 1.6 inches length x 5.68 inches width x 8.78 inches height
Estimated ship weight: 2.66 pounds
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